SQS460ENW-T1_GE3 vs SQS460EN-T1_GE3 vs SQS460EN-T1_GE3-CUT TAPE

 
PartNumberSQS460ENW-T1_GE3SQS460EN-T1_GE3SQS460EN-T1_GE3-CUT TAPE
DescriptionMOSFET 60V Vds -/+20V Vgs AEC-Q101 QualifiedMOSFET 60V 8A 39W AEC-Q101 Qualified
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-1212-8W-8PowerPAK-1212-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current8 A8 A-
Rds On Drain Source Resistance36 mOhms30 mOhms-
Vgs th Gate Source Threshold Voltage2 V1.5 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge13 nC20 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation39 W39 W-
ConfigurationSingleSingle-
QualificationAEC-Q101AEC-Q101-
PackagingReelReel-
SeriesSQSQ-
BrandVishay / SiliconixVishay / Siliconix-
Fall Time8 ns8 ns-
Product TypeMOSFETMOSFET-
Rise Time8 ns8 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time19 ns19 ns-
Typical Turn On Delay Time5 ns5 ns-
Channel Mode-Enhancement-
Tradename-TrenchFET-
Height-1.04 mm-
Length-3.3 mm-
Transistor Type-1 N-Channel-
Width-3.3 mm-
Forward Transconductance Min-16 S-
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