STB11NM60-1 vs STB11NM60 vs STB11NM60A

 
PartNumberSTB11NM60-1STB11NM60STB11NM60A
DescriptionMOSFET N-Ch 600 Volt 11 Amp
ManufacturerSTMicroelectronics-ST
Product CategoryMOSFET-IC Chips
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-262-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current11 A--
Rds On Drain Source Resistance450 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation160 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height8.95 mm--
Length10 mm--
SeriesSTB11NM60--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.4 mm--
BrandSTMicroelectronics--
Forward Transconductance Min5.2 S--
Fall Time11 ns--
Product TypeMOSFET--
Rise Time20 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time6 ns--
Typical Turn On Delay Time20 ns--
Unit Weight0.050717 oz--
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