PartNumber | STB120N4LF6 | STB120N4F6 | STB120N10F4 |
Description | MOSFET N-Ch 40V 3.1 Ohm STripFET VI DeepGATE | MOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATE | MOSFET N-channel 100 V, 8 mOhm typ., 120 A STripFET(TM) DeepGATE(TM) Power MOSFET in D2PAK package |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 40 V | 40 V | 100 V |
Id Continuous Drain Current | 80 A | 80 A | 120 A |
Rds On Drain Source Resistance | 4 mOhms | 4 mOhms | 8 mOhms |
Vgs th Gate Source Threshold Voltage | 2.5 V | 4 V | 2 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 80 nC | 65 nC | 131 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 175 C | + 175 C |
Pd Power Dissipation | 110 W | 110 W | 300 W |
Configuration | Single | Single | Single |
Qualification | AEC-Q101 | AEC-Q101 | - |
Tradename | STripFET | STripFET | - |
Packaging | Reel | Reel | Reel |
Series | STB120N4LF6 | STB120N4F6 | STB120N10F4 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.077603 oz |
Channel Mode | - | - | Enhancement |
Fall Time | - | - | 79 ns |
Rise Time | - | - | 116 ns |
Typical Turn Off Delay Time | - | - | 111 ns |
Typical Turn On Delay Time | - | - | 32 ns |