PartNumber | STB13NM60N | STB13NM50N-1 | STB13NM50N |
Description | MOSFET POWER MOSFET N-CH | MOSFET N Ch 600V 6A Hyper fast IGBT | MOSFET N-CH 500V 12A D2PAK |
Manufacturer | STMicroelectronics | STMicroelectronics | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | Through Hole | - |
Package / Case | TO-263-3 | TO-262-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 650 V | 500 V | - |
Id Continuous Drain Current | 11 A | 12 A | - |
Rds On Drain Source Resistance | 360 mOhms | 320 mOhms | - |
Vgs th Gate Source Threshold Voltage | 3 V | - | - |
Vgs Gate Source Voltage | 25 V | 25 V | - |
Qg Gate Charge | 27 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 90 W | 100 W | - |
Configuration | Single | Single | - |
Tradename | MDmesh | - | - |
Packaging | Reel | - | - |
Series | STB13NM60N | STB13N | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | STMicroelectronics | STMicroelectronics | - |
Fall Time | 10 ns | 10 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 8 ns | 15 ns | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 30 ns | 40 ns | - |
Typical Turn On Delay Time | 3 ns | 30 ns | - |
Unit Weight | 0.139332 oz | 0.050717 oz | - |
Channel Mode | - | Enhancement | - |
Height | - | 8.95 mm | - |
Length | - | 10 mm | - |
Width | - | 4.4 mm | - |