STB18NM60ND vs STB18NM80 vs STB18NM60N

 
PartNumberSTB18NM60NDSTB18NM80STB18NM60N
DescriptionMOSFET N-CH 600V 0.25Ohm 13A FDmesh IIMOSFET N-channel 800 V MDMeshMOSFET N-channel 600 V 0.27 ohm 13 A MDmesh
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3TO-263-3
Number of Channels1 Channel-1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage650 V800 V600 V
Id Continuous Drain Current13 A17 A13 A
Rds On Drain Source Resistance290 mOhms295 mOhms260 mOhms
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage25 V--
Qg Gate Charge34 nC70 nC-
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation130 W190 W-
ConfigurationSingle-Single
PackagingReelReelReel
SeriesSTB18NM60NDSTB18NM80STB18NM60N
Transistor Type1 N-Channel-1 N-Channel
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Fall Time18 ns--
Product TypeMOSFETMOSFETMOSFET
Rise Time15.5 ns--
Factory Pack Quantity100010001000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time13 ns--
Typical Turn On Delay Time55 ns--
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Tradename-MDmesh-
Top