STB24N60DM2 vs STB24N60DM2-CUT TAPE vs STB24N60DM2G

 
PartNumberSTB24N60DM2STB24N60DM2-CUT TAPESTB24N60DM2G
DescriptionMOSFET N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in D2PAK package
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current18 A--
Rds On Drain Source Resistance200 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage25 V--
Qg Gate Charge29 nC--
Pd Power Dissipation150 W--
ConfigurationSingle--
TradenameFDmesh--
PackagingReel--
SeriesSTB24N60DM2--
BrandSTMicroelectronics--
Fall Time15 ns--
Product TypeMOSFET--
Rise Time8.7 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time60 ns--
Typical Turn On Delay Time15 ns--
Unit Weight0.139332 oz--
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