STBV42-AP vs STBV42D vs STBV42

 
PartNumberSTBV42-APSTBV42DSTBV42
DescriptionBipolar Transistors - BJT NPN Hi-Volt Fast SwBipolar Transistors - BJT NPN 700V Vces 400Vceo 9Vebo 1ABipolar Transistors - BJT NPN Hi-Volt Fast Sw
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYYY
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-92-3TO-92-3TO-92-3
Transistor PolarityNPNNPNNPN
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max400 V400 V400 V
Emitter Base Voltage VEBO9 V9 V9 V
Collector Emitter Saturation Voltage0.4 V400 mV0.4 V
Maximum DC Collector Current1 A2 A1 A
Minimum Operating Temperature- 65 C-- 65 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesSTBV42STBV42STBV42
Height4.5 mm-4.95 mm
Length4.8 mm-4.95 mm
PackagingAmmo PackBulkBulk
Width3.8 mm-3.94 mm
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Continuous Collector Current1 A1 A1 A
Pd Power Dissipation1 W1 W1 W
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
Factory Pack Quantity200025002500
SubcategoryTransistorsTransistorsTransistors
Unit Weight0.016000 oz0.016000 oz0.016000 oz
DC Collector/Base Gain hfe Min-5-
Collector Base Voltage VCBO--700 V
Top