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| PartNumber | STD11N60DM2 | STD11N65M2 | STD11N60M2-EP |
| Description | MOSFET N-channel 600 V, 0.370 Ohm typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package | MOSFET N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in DPAK package | MOSFET N-channel 600 V, 0.550 Ohm typ., 7.5 A MDmesh M2 EP Power MOSFET in a DPAK package |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 650 V | 600 V |
| Id Continuous Drain Current | 10 A | 7 A | 7.5 A |
| Rds On Drain Source Resistance | 370 mOhms | 670 mOhms | 550 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | 2 V |
| Vgs Gate Source Voltage | 25 V | 25 V | 25 V |
| Qg Gate Charge | 16.5 nC | 12.5 nC | 12.4 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 110 W | 85 W | 85 W |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | MDmesh | MDmesh II Plus | MDmesh |
| Packaging | Reel | Reel | Reel |
| Series | STD11N60DM2 | STD11N65M2 | STD11N60M2-EP |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Fall Time | 9.5 ns | 15 ns | 8 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 6.3 ns | 7.5 ns | 5.5 ns |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 31 ns | 26 ns | 26 ns |
| Typical Turn On Delay Time | 11.7 ns | 9.5 ns | 9 ns |
| Unit Weight | 0.011993 oz | 0.139332 oz | 0.011993 oz |
| Product | - | Power MOSFET | - |