STD2NK100Z vs STD2NK100Z-1 vs STD2NK100ZT4

 
PartNumberSTD2NK100ZSTD2NK100Z-1STD2NK100ZT4
DescriptionMOSFET N-Channel 1000V Zener SuperMESH
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage1 kV--
Id Continuous Drain Current1.85 A--
Rds On Drain Source Resistance8.5 Ohms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge16 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation70 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameSuperMESH--
PackagingReel--
Height2.4 mm--
Length6.6 mm--
SeriesSTD2NK100Z--
Transistor Type1 N-Channel Power MOSFET--
Width6.2 mm--
BrandSTMicroelectronics--
Forward Transconductance Min2.4 S--
Fall Time32.5 ns--
Product TypeMOSFET--
Rise Time6.5 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time41.5 ns--
Typical Turn On Delay Time7.2 ns--
Unit Weight0.139332 oz--
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