STE250NS10 vs STE250N05 vs STE250N06

 
PartNumberSTE250NS10STE250N05STE250N06
DescriptionMOSFET N-Ch 100 Volt 220 A
ManufacturerSTMicroelectronics-ST
Product CategoryMOSFET-IC Chips
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseISOTOP-4--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current220 A--
Rds On Drain Source Resistance5.5 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation500 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height9.1 mm--
Length38.2 mm--
SeriesSTE250NS10--
Transistor Type1 N-Channel--
TypeMOSFET--
Width25.5 mm--
BrandSTMicroelectronics--
Forward Transconductance Min60 S--
Fall Time300 ns--
Product TypeMOSFET--
Rise Time380 ns--
Factory Pack Quantity10--
SubcategoryMOSFETs--
Typical Turn Off Delay Time1100 ns--
Typical Turn On Delay Time110 ns--
Unit Weight1 oz--
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