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| PartNumber | STF11N60DM2 | STF11N60M2-EP | STF11N65K3 |
| Description | MOSFET N-channel 600 V, 0.370 Ohm typ., 10 A MDmesh DM2 Power MOSFET in a TO-220FP package | MOSFET N-channel 600 V, 0.550 Ohm typ., 7.5 A MDmesh M2 EP Power MOSFET in a TO-220FP package | MOSFET N-Ch 650V 0.765 11A SuperMESH 3 PWR MO |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220FP-3 | TO-220FP-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 650 V |
| Id Continuous Drain Current | 10 A | 7.5 A | 11 A |
| Rds On Drain Source Resistance | 370 mOhms | 550 mOhms | 765 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 2 V | - |
| Vgs Gate Source Voltage | 25 V | 25 V | 30 V |
| Qg Gate Charge | 16.5 nC | 12.4 nC | 42 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 25 W | 25 W | 35 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | MDmesh | MDmesh | - |
| Series | STF11N60DM2 | STF11N60M2-EP | STF11N65K3 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Fall Time | 9.5 ns | 8 ns | 35 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 6.3 ns | 5.5 ns | 14 ns |
| Factory Pack Quantity | 1000 | 1000 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 31 ns | 26 ns | 44 ns |
| Typical Turn On Delay Time | 11.7 ns | 9 ns | 14.5 ns |
| Unit Weight | 0.067021 oz | 0.068784 oz | 0.011640 oz |
| Packaging | - | - | Tube |