STF18N60M2 vs STF18N60 vs STF18N60DM2

 
PartNumberSTF18N60M2STF18N60STF18N60DM2
DescriptionMOSFET N-CH 600V 0.255Ohm 13A MDmesh M2MOSFET N-CH 600V 13A TO220FP
ManufacturerSTMicroelectronicsST-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current13 A--
Rds On Drain Source Resistance255 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage25 V--
Qg Gate Charge21.5 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation25 W--
ConfigurationSingleSingle-
TradenameMDmesh--
PackagingTubeTube-
SeriesSTF18N60M2MDmesh M2-
Transistor Type1 N-Channel1 N-Channel-
BrandSTMicroelectronics--
Fall Time10.6 ns10.6 ns-
Product TypeMOSFET--
Rise Time9 ns9 ns-
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time47 ns47 ns-
Typical Turn On Delay Time12 ns12 ns-
Unit Weight0.011640 oz0.011640 oz-
Package Case-TO-220-3-
Pd Power Dissipation-25 W-
Vgs Gate Source Voltage-25 V-
Id Continuous Drain Current-13 A-
Vds Drain Source Breakdown Voltage-600 V-
Vgs th Gate Source Threshold Voltage-3 V-
Rds On Drain Source Resistance-255 mOhms-
Qg Gate Charge-21.5 nC-
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