STF42N60M2-EP vs STF42N65M5 vs STF42

 
PartNumberSTF42N60M2-EPSTF42N65M5STF42
DescriptionMOSFET N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a TO-220FP packageMOSFET N-CH 65V 33A MDMESH
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220FP-3TO-220-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V650 V-
Id Continuous Drain Current34 A33 A-
Rds On Drain Source Resistance87 mOhms79 mOhms-
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage25 V25 V-
Qg Gate Charge55 nC--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation40 W40 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameMDmeshMDmesh-
SeriesSTF42N60M2-EPSTF42N65M5-
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time8 ns13 ns8 ns
Product TypeMOSFETMOSFET-
Rise Time9.5 ns24 ns9.5 ns
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time96.5 ns65 ns96.5 ns
Typical Turn On Delay Time16.5 ns61 ns16.5 ns
Unit Weight0.081130 oz0.011640 oz0.081130 oz
Packaging-Tube-
Height-9.3 mm-
Length-10.4 mm-
Transistor Type-1 N-Channel-
Width-4.6 mm-
Package Case--TO-220FP-3
Pd Power Dissipation--40 W
Vgs Gate Source Voltage--+/- 25 V
Id Continuous Drain Current--34 A
Vds Drain Source Breakdown Voltage--600 V
Vgs th Gate Source Threshold Voltage--2 V
Rds On Drain Source Resistance--87 mOhms
Qg Gate Charge--55 nC
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