STF4N62K3 vs STF4N80K5 vs STF4N52K3

 
PartNumberSTF4N62K3STF4N80K5STF4N52K3
DescriptionMOSFET N-Ch 620V 1.7 Ohm 3.8A SuperMESH 3MOSFET N-CH 800V 2.1Ohm 3A Zener-protectedMOSFET N-ch 525 V 2.5 A 2.1 Ohm SuperMESH3
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3TO-220FP-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage620 V800 V525 V
Id Continuous Drain Current3.8 A3 A2.5 A
Rds On Drain Source Resistance2 Ohms2.1 Ohms2.6 Ohms
Vgs Gate Source Voltage30 V30 V30 V
Qg Gate Charge22 nC10.5 nC11 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation25 W20 W20 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameSuperMESHMDmesh-
PackagingTubeTubeTube
SeriesSTF4N62K3STF4N80K5STF4N52K3
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Fall Time19 ns21 ns14 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time9 ns15 ns7 ns
Factory Pack Quantity1000100050
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time29 ns36 ns21 ns
Typical Turn On Delay Time10 ns16.5 ns8 ns
Unit Weight0.011640 oz0.011640 oz0.139332 oz
Vgs th Gate Source Threshold Voltage-4 V-
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