PartNumber | STF5NK100Z | STF5NK100 | STF5NK100,5NK100 |
Description | MOSFET N-Ch 1000 Volt 3.5A Zener SuperMESH | ||
Manufacturer | STMicroelectronics | STMicroelectronics | - |
Product Category | MOSFET | FETs - Single | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-220-3 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 1 kV | - | - |
Id Continuous Drain Current | 3.5 A | - | - |
Rds On Drain Source Resistance | 3.7 Ohms | - | - |
Vgs Gate Source Voltage | 30 V | - | - |
Qg Gate Charge | 42 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 125 W | - | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | SuperMESH | - | - |
Packaging | Tube | Tube | - |
Height | 9.3 mm | - | - |
Length | 10.4 mm | - | - |
Series | STF5NK100Z | SuperMESH3 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Type | MOSFET | - | - |
Width | 4.6 mm | - | - |
Brand | STMicroelectronics | - | - |
Forward Transconductance Min | 4 S | - | - |
Fall Time | 19 ns | 19 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 7.7 ns | 7.7 ns | - |
Factory Pack Quantity | 1000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 51.5 ns | 51.5 ns | - |
Typical Turn On Delay Time | 22.5 ns | 22.5 ns | - |
Unit Weight | 0.011640 oz | 0.011640 oz | - |
Package Case | - | TO-220-3 Full Pack | - |
Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
Mounting Type | - | Through Hole | - |
Supplier Device Package | - | TO-220FP | - |
FET Type | - | MOSFET N-Channel, Metal Oxide | - |
Power Max | - | 30W | - |
Drain to Source Voltage Vdss | - | 1000V (1kV) | - |
Input Capacitance Ciss Vds | - | 1154pF @ 25V | - |
FET Feature | - | Standard | - |
Current Continuous Drain Id 25°C | - | 3.5A (Tc) | - |
Rds On Max Id Vgs | - | 3.7 Ohm @ 1.75A, 10V | - |
Vgs th Max Id | - | 4.5V @ 100μA | - |
Gate Charge Qg Vgs | - | 59nC @ 10V | - |
Pd Power Dissipation | - | 125 W | - |
Vgs Gate Source Voltage | - | 30 V | - |
Id Continuous Drain Current | - | 3.5 A | - |
Vds Drain Source Breakdown Voltage | - | 1000 V | - |
Rds On Drain Source Resistance | - | 3.7 Ohms | - |
Qg Gate Charge | - | 42 nC | - |
Forward Transconductance Min | - | 4 S | - |