STF5NK100Z vs STF5NK100 vs STF5NK100,5NK100

 
PartNumberSTF5NK100ZSTF5NK100STF5NK100,5NK100
DescriptionMOSFET N-Ch 1000 Volt 3.5A Zener SuperMESH
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage1 kV--
Id Continuous Drain Current3.5 A--
Rds On Drain Source Resistance3.7 Ohms--
Vgs Gate Source Voltage30 V--
Qg Gate Charge42 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation125 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameSuperMESH--
PackagingTubeTube-
Height9.3 mm--
Length10.4 mm--
SeriesSTF5NK100ZSuperMESH3-
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFET--
Width4.6 mm--
BrandSTMicroelectronics--
Forward Transconductance Min4 S--
Fall Time19 ns19 ns-
Product TypeMOSFET--
Rise Time7.7 ns7.7 ns-
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time51.5 ns51.5 ns-
Typical Turn On Delay Time22.5 ns22.5 ns-
Unit Weight0.011640 oz0.011640 oz-
Package Case-TO-220-3 Full Pack-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Through Hole-
Supplier Device Package-TO-220FP-
FET Type-MOSFET N-Channel, Metal Oxide-
Power Max-30W-
Drain to Source Voltage Vdss-1000V (1kV)-
Input Capacitance Ciss Vds-1154pF @ 25V-
FET Feature-Standard-
Current Continuous Drain Id 25°C-3.5A (Tc)-
Rds On Max Id Vgs-3.7 Ohm @ 1.75A, 10V-
Vgs th Max Id-4.5V @ 100μA-
Gate Charge Qg Vgs-59nC @ 10V-
Pd Power Dissipation-125 W-
Vgs Gate Source Voltage-30 V-
Id Continuous Drain Current-3.5 A-
Vds Drain Source Breakdown Voltage-1000 V-
Rds On Drain Source Resistance-3.7 Ohms-
Qg Gate Charge-42 nC-
Forward Transconductance Min-4 S-
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