STF6N60M2 vs STF6N60DM2 vs STF6N60

 
PartNumberSTF6N60M2STF6N60DM2STF6N60
DescriptionMOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2MOSFET
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-220FP-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current4.5 A--
Rds On Drain Source Resistance1.2 Ohms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge8 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation20 W--
ConfigurationSingle-Single
Channel ModeEnhancement--
TradenameMDmesh--
PackagingTube-Tube
SeriesSTF6N60M2STF6N60DM2MDmesh M2
Transistor Type1 N-Channel Power MOSFET-1 N-Channel
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time22.5 ns-22.5 ns
Product TypeMOSFETMOSFET-
Rise Time7.4 ns-7.4 nS
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time24 ns-24 ns
Typical Turn On Delay Time9.5 ns-9.5 ns
Unit Weight0.011640 oz-0.011640 oz
Package Case--TO-220-3
Pd Power Dissipation--20 W
Vgs Gate Source Voltage--25 V
Id Continuous Drain Current--4.5 A
Vds Drain Source Breakdown Voltage--600 V
Vgs th Gate Source Threshold Voltage--3 V
Rds On Drain Source Resistance--1.06 Ohms
Qg Gate Charge--8 nC
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