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STF7N60M2 vs STF7N60DM2 vs STF7N60

 
PartNumberSTF7N60M2STF7N60DM2STF7N60
DescriptionMOSFET N-CH 600V 0.86Ohm 5A MDmesh M2MOSFET N-channel 600 V, 0.78 Ohm typ., 6 A MDmesh DM2 Power MOSFET in a TO-220FP package
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220FP-3-
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current5 A--
Rds On Drain Source Resistance860 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage25 V--
Qg Gate Charge8.8 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation20 W--
ConfigurationSingle-Single
TradenameMDmeshMDmesh-
PackagingTube-Tube
SeriesSTF7N60M2STF7N60DM2MDmesh M2
Transistor Type1 N-Channel-1 N-Channel
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time15.9 ns-15.9 ns
Product TypeMOSFETMOSFET-
Rise Time7.2 ns-7.2 ns
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time19.3 ns-19.3 ns
Typical Turn On Delay Time7.6 ns-7.6 ns
Unit Weight0.011640 oz-0.011640 oz
Package Case--TO-220-3
Pd Power Dissipation--20 W
Vgs Gate Source Voltage--25 V
Id Continuous Drain Current--5 A
Vds Drain Source Breakdown Voltage--600 V
Vgs th Gate Source Threshold Voltage--3 V
Rds On Drain Source Resistance--860 mOhms
Qg Gate Charge--8.8 nC
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