STF9NM60N vs STF9NM60N(045Y) vs STF9NM60N,9NM60N

 
PartNumberSTF9NM60NSTF9NM60N(045Y)STF9NM60N,9NM60N
DescriptionMOSFET N-Ch 600V 0.47 Ohm 9A Mdmesh II PWR MO
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current6.5 A--
Rds On Drain Source Resistance745 mOhms--
Vgs Gate Source Voltage25 V--
Qg Gate Charge17.4 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation25 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameMDmesh--
PackagingTube--
SeriesSTF9NM60N--
Transistor Type1 N-Channel--
BrandSTMicroelectronics--
Fall Time26.7 ns--
Product TypeMOSFET--
Rise Time23 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time52.5 ns--
Typical Turn On Delay Time28 ns--
Unit Weight0.011640 oz--
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