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| PartNumber | STFI10LN80K5 | STFI10N62K3 | STFI10N60M2 |
| Description | MOSFET POWER MOSFET | RF Bipolar Transistors MOSFET N-Ch 620 V 0.68 Ohm 8.4 A SuperMESH3 | |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220FP-3 | - | - |
| Packaging | Tube | Tube | - |
| Series | STFI10LN80K5 | N-channel MDmesh | - |
| Brand | STMicroelectronics | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 1500 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.068784 oz | - | - |
| Package Case | - | I2PAKFP-3 | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 N-Channel | - |
| Pd Power Dissipation | - | 30 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 31 ns | - |
| Rise Time | - | 15 ns | - |
| Vgs Gate Source Voltage | - | 30 V | - |
| Id Continuous Drain Current | - | 8.4 A | - |
| Vds Drain Source Breakdown Voltage | - | 620 V | - |
| Vgs th Gate Source Threshold Voltage | - | 3.75 V | - |
| Rds On Drain Source Resistance | - | 680 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 41 ns | - |
| Typical Turn On Delay Time | - | 14.5 ns | - |
| Qg Gate Charge | - | 42 nC | - |
| Channel Mode | - | Enhancement | - |