STGB10NC60KDT4 vs STGB10NC60KD vs STGB10NC60KDSF

 
PartNumberSTGB10NC60KDT4STGB10NC60KDSTGB10NC60KDSF
DescriptionIGBT Transistors N-channel MOSFET
ManufacturerSTMicroelectronics--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseD2PAK-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Maximum Gate Emitter Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesSTGB10NC60KDT4--
PackagingReel--
Continuous Collector Current Ic Max20 A--
Height4.6 mm--
Length10.4 mm--
Width9.35 mm--
BrandSTMicroelectronics--
Product TypeIGBT Transistors--
Factory Pack Quantity1000--
SubcategoryIGBTs--
Unit Weight0.079014 oz--
Top