STGB18N40LZT4 vs STGB18N40LZ-1 vs STGB18N40

 
PartNumberSTGB18N40LZT4STGB18N40LZ-1STGB18N40
DescriptionIGBT Transistors EAS 180 mJ-400 VIGBT Transistors EAS 180 mJ-400V IGBT
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryIGBT TransistorsIGBT TransistorsIGBTs - Single
RoHSYY-
TechnologySiSi-
Package / CaseD2PAK-3I2PAK-3-
Mounting StyleSMD/SMTSMD/SMT-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max360 V360 V-
Maximum Gate Emitter Voltage12 V12 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesSTGB18N40LZT4STGB18N40LZ-1PowerMESH
QualificationAEC-Q101--
PackagingReelTubeTube
Continuous Collector Current Ic Max30 A30 A-
Height4.6 mm9.35 mm-
Length10.4 mm10.4 mm-
Width9.35 mm4.6 mm-
BrandSTMicroelectronicsSTMicroelectronics-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity100050-
SubcategoryIGBTsIGBTs-
Unit Weight0.079014 oz0.084199 oz-
Package Case--TO-262-3 Long Leads, I2Pak, TO-262AA
Input Type--Logic
Mounting Type--Through Hole
Supplier Device Package--I2PAK
Power Max--150W
Reverse Recovery Time trr---
Current Collector Ic Max--30A
Voltage Collector Emitter Breakdown Max--420V
IGBT Type---
Current Collector Pulsed Icm--40A
Vce on Max Vge Ic--1.7V @ 4.5V, 10A
Switching Energy---
Gate Charge--29nc
Td on off 25°C--650ns/13.5μs
Test Condition--300V, 10A, 5V
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