STGB20N45LZAG vs STGB20N40LZ vs STGB20NB321LZ

 
PartNumberSTGB20N45LZAGSTGB20N40LZSTGB20NB321LZ
DescriptionIGBT Transistors PTD HIGH VOLTAGEIGBT Transistors 390V IGBT EAS 300mJ Internally Clamped
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseD2PAK-3D2PAK-3-
Mounting StyleSMD/SMTSMD/SMT-
Collector Emitter Voltage VCEO Max450 V425 V-
Collector Emitter Saturation Voltage1.25 V1.5 V-
Maximum Gate Emitter Voltage16 V16 V-
Continuous Collector Current at 25 C25 A--
Pd Power Dissipation150 W150 W-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
SeriesSTGB20N45LZAGSTGB20N40LZ-
QualificationAEC-Q101AEC-Q101-
Continuous Collector Current Ic Max25 A25 A-
BrandSTMicroelectronicsSTMicroelectronics-
Gate Emitter Leakage Current625 uA625 uA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity10001000-
SubcategoryIGBTsIGBTs-
Configuration-Single-
Packaging-Reel-
Unit Weight-0.079014 oz-
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