STGD10NC60HDT4 vs STGD10NC60H vs STGD10NC60HD

 
PartNumberSTGD10NC60HDT4STGD10NC60HSTGD10NC60HD
DescriptionIGBT Transistors 600 Volt 10 Amp
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseDPAK-3--
Mounting StyleSMD/SMTSMD/SMT-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max600 V--
Maximum Gate Emitter Voltage20 V+/- 20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesSTGD10NC60HDPowerMESH-
PackagingReelDigi-ReelR Alternate Packaging-
Continuous Collector Current Ic Max20 A20 A-
Height2.4 mm--
Length6.6 mm--
Width6.2 mm--
BrandSTMicroelectronics--
Product TypeIGBT Transistors--
Factory Pack Quantity2500--
SubcategoryIGBTs--
Unit Weight0.012346 oz0.012346 oz-
Package Case-TO-252-3, DPak (2 Leads + Tab), SC-63-
Input Type-Standard-
Mounting Type-Surface Mount-
Supplier Device Package-D-Pak-
Power Max-62W-
Reverse Recovery Time trr-22ns-
Current Collector Ic Max-20A-
Voltage Collector Emitter Breakdown Max-600V-
IGBT Type---
Current Collector Pulsed Icm-30A-
Vce on Max Vge Ic-2.5V @ 15V, 5A-
Switching Energy-31.8μJ (on), 95μJ (off)-
Gate Charge-19.2nC-
Td on off 25°C-14.2ns/72ns-
Test Condition-390V, 5A, 10 Ohm, 15V-
Collector Emitter Voltage VCEO Max-600 V-
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