PartNumber | STGD18N40LZ-1 | STGD18N40LZ | STGD18N40LZ GD18N40LZ |
Description | IGBT Transistors EAS 180 mJ-400 V clamped IGBT | 360V 30A 150W TO252 | |
Manufacturer | STMicroelectronics | STMicroelectronics | - |
Product Category | IGBT Transistors | IGBTs - Single | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Package / Case | IPAK-3 | - | - |
Mounting Style | Through Hole | Through Hole | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 360 V | - | - |
Maximum Gate Emitter Voltage | 12 V | 12 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Series | STGD18N40LZ | PowerMESH | - |
Packaging | Tube | Tube | - |
Continuous Collector Current Ic Max | 25 A | 25 A | - |
Height | 6.2 mm | - | - |
Length | 6.6 mm | - | - |
Width | 2.4 mm | - | - |
Brand | STMicroelectronics | - | - |
Product Type | IGBT Transistors | - | - |
Factory Pack Quantity | 75 | - | - |
Subcategory | IGBTs | - | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |
Package Case | - | TO-251-3 Short Leads, IPak, TO-251AA | - |
Input Type | - | Logic | - |
Mounting Type | - | Through Hole | - |
Supplier Device Package | - | I-Pak | - |
Power Max | - | 125W | - |
Reverse Recovery Time trr | - | - | - |
Current Collector Ic Max | - | 25A | - |
Voltage Collector Emitter Breakdown Max | - | 420V | - |
IGBT Type | - | - | - |
Current Collector Pulsed Icm | - | 40A | - |
Vce on Max Vge Ic | - | 1.7V @ 4.5V, 10A | - |
Switching Energy | - | - | - |
Gate Charge | - | 29nc | - |
Td on off 25°C | - | 650ns/13.5μs | - |
Test Condition | - | 300V, 10A, 5V | - |
Collector Emitter Voltage VCEO Max | - | 360 V | - |