STGD18N40LZ-1 vs STGD18N40LZ vs STGD18N40LZ GD18N40LZ

 
PartNumberSTGD18N40LZ-1STGD18N40LZSTGD18N40LZ GD18N40LZ
DescriptionIGBT Transistors EAS 180 mJ-400 V clamped IGBT360V 30A 150W TO252
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseIPAK-3--
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max360 V--
Maximum Gate Emitter Voltage12 V12 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesSTGD18N40LZPowerMESH-
PackagingTubeTube-
Continuous Collector Current Ic Max25 A25 A-
Height6.2 mm--
Length6.6 mm--
Width2.4 mm--
BrandSTMicroelectronics--
Product TypeIGBT Transistors--
Factory Pack Quantity75--
SubcategoryIGBTs--
Unit Weight0.139332 oz0.139332 oz-
Package Case-TO-251-3 Short Leads, IPak, TO-251AA-
Input Type-Logic-
Mounting Type-Through Hole-
Supplier Device Package-I-Pak-
Power Max-125W-
Reverse Recovery Time trr---
Current Collector Ic Max-25A-
Voltage Collector Emitter Breakdown Max-420V-
IGBT Type---
Current Collector Pulsed Icm-40A-
Vce on Max Vge Ic-1.7V @ 4.5V, 10A-
Switching Energy---
Gate Charge-29nc-
Td on off 25°C-650ns/13.5μs-
Test Condition-300V, 10A, 5V-
Collector Emitter Voltage VCEO Max-360 V-
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