STGF10NC60KD vs STGF10NC60SD vs STGF10NC60HD

PartNumber	STGF10NC60KD	STGF10NC60SD	STGF10NC60HD
Description	IGBT Transistors PowerMESH&#34 IGBT	IGBT Transistors 10 A-600 V fast IGBT	IGBT Transistors IGBT
Manufacturer	STMicroelectronics	STMicroelectronics	STMicroelectronics
Product Category	IGBT Transistors	IGBT Transistors	IGBT Transistors
RoHS	Y	Y	Y
Technology	Si	Si	Si
Package / Case	TO-220-3 FP	TO-220-3 FP	TO-220-3 FP
Mounting Style	Through Hole	Through Hole	Through Hole
Configuration	Single	-	Single
Collector Emitter Voltage VCEO Max	600 V	600 V	600 V
Collector Emitter Saturation Voltage	2 V	1.45 V	-
Maximum Gate Emitter Voltage	20 V	20 V	20 V
Pd Power Dissipation	25 W	25 W	-
Minimum Operating Temperature	- 55 C	-	- 55 C
Maximum Operating Temperature	+ 150 C	-	+ 150 C
Series	STGF10NC60KD	STGF10NC60SD	STGF10NC60HD
Packaging	Tube	Tube	Tube
Continuous Collector Current Ic Max	9 A	-	9 A
Height	9.3 mm	-	9.3 mm
Length	10.4 mm	-	10.4 mm
Width	4.6 mm	-	4.6 mm
Brand	STMicroelectronics	STMicroelectronics	STMicroelectronics
Continuous Collector Current	6 A	-	-
Gate Emitter Leakage Current	100 nA	100 nA	-
Product Type	IGBT Transistors	IGBT Transistors	IGBT Transistors
Factory Pack Quantity	1000	50	50
Subcategory	IGBTs	IGBTs	IGBTs
Unit Weight	0.081130 oz	0.081130 oz	0.081130 oz
Continuous Collector Current at 25 C	-	10 A	-