STGF19NC60HD vs STGF19NC60HD GF19NC60HD vs STGF19NC60HD/KD/WD

 
PartNumberSTGF19NC60HDSTGF19NC60HD GF19NC60HDSTGF19NC60HD/KD/WD
DescriptionIGBT Transistors N-CHANNEL MFT
ManufacturerSTMicroelectronics--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-220-3 FP--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.8 V/1.6 V--
Maximum Gate Emitter Voltage20 V--
Pd Power Dissipation35 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesSTGF19NC60HD--
PackagingTube--
Continuous Collector Current Ic Max16 A--
Height9.3 mm--
Length10.4 mm--
Width4.6 mm--
BrandSTMicroelectronics--
Continuous Collector Current9 A/16 A--
Gate Emitter Leakage Current+/- 100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity1000--
SubcategoryIGBTs--
Unit Weight0.081130 oz--
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