STGF20M65DF2 vs STGF20H60DF vs STGF20H60DF GF20H60DF

 
PartNumberSTGF20M65DF2STGF20H60DFSTGF20H60DF GF20H60DF
DescriptionIGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A low lossIGBT Transistors 600V 20A High Speed Trench Gate IGBT
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-220FP-3TO-220-3 FP-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max650 V600 V-
Collector Emitter Saturation Voltage1.55 V2 V-
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C40 A40 A-
Pd Power Dissipation32.6 W37 W-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
SeriesSTGF20M65DF2STGF20H60DF-
Continuous Collector Current Ic Max40 A--
BrandSTMicroelectronicsSTMicroelectronics-
Gate Emitter Leakage Current250 uA250 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity10001000-
SubcategoryIGBTsIGBTs-
Unit Weight0.068784 oz0.081130 oz-
Packaging-Tube-
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