STGP10H60DF vs STGP10M65DF2 vs STGP100N30

PartNumber	STGP10H60DF	STGP10M65DF2	STGP100N30
Description	IGBT Transistors Trench gate H series 600V 10A HiSpd	IGBT Transistors Trench gate field-stop IGBT M series, 650 V 10 A low loss	IGBT Transistors 330volt 90 Amp
Manufacturer	STMicroelectronics	STMicroelectronics	STMicroelectronics
Product Category	IGBT Transistors	IGBT Transistors	IGBT Transistors
RoHS	Y	Y	Y
Technology	Si	Si	Si
Package / Case	TO-220-3	-	TO-220-3
Mounting Style	Through Hole	-	Through Hole
Configuration	Single	-	Single
Collector Emitter Voltage VCEO Max	600 V	-	330 V
Collector Emitter Saturation Voltage	1.5 V	-	-
Maximum Gate Emitter Voltage	20 V	-	20 V
Continuous Collector Current at 25 C	20 A	-	-
Pd Power Dissipation	115 W	-	-
Minimum Operating Temperature	- 55 C	-	- 55 C
Maximum Operating Temperature	+ 175 C	-	+ 150 C
Series	STGP10H60DF	STGP10M65DF2	STGP100N30
Packaging	Tube	Tube	Reel
Continuous Collector Current Ic Max	10 A	-	90 A
Brand	STMicroelectronics	STMicroelectronics	STMicroelectronics
Gate Emitter Leakage Current	250 nA	-	-
Product Type	IGBT Transistors	IGBT Transistors	IGBT Transistors
Factory Pack Quantity	1000	1000	1000
Subcategory	IGBTs	IGBTs	IGBTs
Unit Weight	0.211644 oz	0.070548 oz	0.211644 oz
Height	-	-	9.15 mm
Length	-	-	10.4 mm
Width	-	-	4.6 mm