PartNumber | STGP20M65DF2 | STGP20H60DF | STGP20NB37LZ |
Description | IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A low loss | IGBT Transistors 600V 20A High Speed Trench Gate IGBT | |
Manufacturer | STMicroelectronics | STMicroelectronics | - |
Product Category | IGBT Transistors | IGBT Transistors | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Package / Case | TO-220-3 | TO-220-3 | - |
Mounting Style | Through Hole | Through Hole | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 650 V | 600 V | - |
Collector Emitter Saturation Voltage | 1.55 V | 2 V | - |
Maximum Gate Emitter Voltage | 20 V | 20 V | - |
Continuous Collector Current at 25 C | 40 A | 40 A | - |
Pd Power Dissipation | 166 W | 167 W | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Series | STGP20M65DF2 | STGP20H60DF | - |
Continuous Collector Current Ic Max | 40 A | - | - |
Brand | STMicroelectronics | STMicroelectronics | - |
Gate Emitter Leakage Current | 250 uA | 250 nA | - |
Product Type | IGBT Transistors | IGBT Transistors | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | IGBTs | IGBTs | - |
Unit Weight | 0.063493 oz | 0.081130 oz | - |
Packaging | - | Tube | - |