STGW20H60DF vs STGW20IH125DF vs STGW20H65FB

PartNumber	STGW20H60DF	STGW20IH125DF	STGW20H65FB
Description	IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop	IGBT Transistors 1250V 20A trench gate field-stop IGBT	IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 20 A high speed
Manufacturer	STMicroelectronics	STMicroelectronics	STMicroelectronics
Product Category	IGBT Transistors	IGBT Transistors	IGBT Transistors
RoHS	Y	Y	Y
Technology	Si	Si	Si
Package / Case	TO-247-3	TO-247-3	TO-247-3
Mounting Style	Through Hole	Through Hole	Through Hole
Configuration	Single	Single	Single
Collector Emitter Voltage VCEO Max	600 V	1.25 kV	650 V
Collector Emitter Saturation Voltage	2 V	2.55 V	1.55 V
Maximum Gate Emitter Voltage	20 V	20 V	20 V
Continuous Collector Current at 25 C	40 A	40 A	40 A
Pd Power Dissipation	167 W	259 W	168 W
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 175 C	+ 175 C	+ 175 C
Series	STGW20H60DF	STGW20IH125DF	STGW20H65FB
Packaging	Tube	Tube	Tube
Continuous Collector Current Ic Max	20 A	20 A	20 A
Brand	STMicroelectronics	STMicroelectronics	STMicroelectronics
Gate Emitter Leakage Current	250 nA	250 nA	250 nA
Product Type	IGBT Transistors	IGBT Transistors	IGBT Transistors
Factory Pack Quantity	600	600	600
Subcategory	IGBTs	IGBTs	IGBTs
Unit Weight	1.340411 oz	1.340411 oz	1.340411 oz