PartNumber | STGW40V60DF | STGW40V60D | STGW40V60DF GW40V60DF |
Description | IGBT Transistors 600V 40A High Speed Trench Gate IGBT | ||
Manufacturer | STMicroelectronics | ST | - |
Product Category | IGBT Transistors | IGBTs - Single | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Package / Case | TO-247 | - | - |
Mounting Style | Through Hole | Through Hole | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 600 V | - | - |
Collector Emitter Saturation Voltage | 2.35 V | 2.35 V | - |
Maximum Gate Emitter Voltage | 20 V | 20 V | - |
Continuous Collector Current at 25 C | 80 A | 80 A | - |
Pd Power Dissipation | 283 W | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Series | STGW40V60DF | 600-650V IGBTs | - |
Packaging | Tube | Tube | - |
Brand | STMicroelectronics | - | - |
Gate Emitter Leakage Current | 250 nA | 250 nA | - |
Product Type | IGBT Transistors | - | - |
Factory Pack Quantity | 600 | - | - |
Subcategory | IGBTs | - | - |
Unit Weight | 0.229281 oz | 0.229281 oz | - |
Package Case | - | TO-247-3 | - |
Input Type | - | Standard | - |
Mounting Type | - | Through Hole | - |
Supplier Device Package | - | TO-247 | - |
Power Max | - | 283W | - |
Reverse Recovery Time trr | - | 41ns | - |
Current Collector Ic Max | - | 80A | - |
Voltage Collector Emitter Breakdown Max | - | 600V | - |
IGBT Type | - | Trench Field Stop | - |
Current Collector Pulsed Icm | - | 160A | - |
Vce on Max Vge Ic | - | 2.3V @ 15V, 40A | - |
Switching Energy | - | 456μJ (on), 411μJ (off) | - |
Gate Charge | - | 226nC | - |
Td on off 25°C | - | 52ns/208ns | - |
Test Condition | - | 400V, 40A, 10 Ohm, 15V | - |
Pd Power Dissipation | - | 283 W | - |
Collector Emitter Voltage VCEO Max | - | 600 V | - |