STGW40V60DF vs STGW40V60D vs STGW40V60DF GW40V60DF

 
PartNumberSTGW40V60DFSTGW40V60DSTGW40V60DF GW40V60DF
DescriptionIGBT Transistors 600V 40A High Speed Trench Gate IGBT
ManufacturerSTMicroelectronicsST-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-247--
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.35 V2.35 V-
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C80 A80 A-
Pd Power Dissipation283 W--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
SeriesSTGW40V60DF600-650V IGBTs-
PackagingTubeTube-
BrandSTMicroelectronics--
Gate Emitter Leakage Current250 nA250 nA-
Product TypeIGBT Transistors--
Factory Pack Quantity600--
SubcategoryIGBTs--
Unit Weight0.229281 oz0.229281 oz-
Package Case-TO-247-3-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-TO-247-
Power Max-283W-
Reverse Recovery Time trr-41ns-
Current Collector Ic Max-80A-
Voltage Collector Emitter Breakdown Max-600V-
IGBT Type-Trench Field Stop-
Current Collector Pulsed Icm-160A-
Vce on Max Vge Ic-2.3V @ 15V, 40A-
Switching Energy-456μJ (on), 411μJ (off)-
Gate Charge-226nC-
Td on off 25°C-52ns/208ns-
Test Condition-400V, 40A, 10 Ohm, 15V-
Pd Power Dissipation-283 W-
Collector Emitter Voltage VCEO Max-600 V-
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