STGW60V60DF vs STGW60V60DF GW60V60DF vs STGW60V60DLF

 
PartNumberSTGW60V60DFSTGW60V60DF GW60V60DFSTGW60V60DLF
DescriptionIGBT Transistors 600V 60A High Speed Trench Gate IGBTIGBT BIPO 600V 60A TO247
ManufacturerSTMicroelectronics-STMicroelectronics
Product CategoryIGBT Transistors-IGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-247--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.35 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C80 A--
Pd Power Dissipation375 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
SeriesSTGW60V60DF-*
PackagingTube--
BrandSTMicroelectronics--
Gate Emitter Leakage Current250 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity600--
SubcategoryIGBTs--
Unit Weight0.229281 oz--
Package Case---
Input Type---
Mounting Type---
Supplier Device Package---
Power Max---
Reverse Recovery Time trr---
Current Collector Ic Max---
Voltage Collector Emitter Breakdown Max---
IGBT Type---
Current Collector Pulsed Icm---
Vce on Max Vge Ic---
Switching Energy---
Gate Charge---
Td on off 25°C---
Test Condition---
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