STGW80H65DFB-4 vs STGW80H65FB vs STGW80H65DFB

PartNumber	STGW80H65DFB-4	STGW80H65FB	STGW80H65DFB
Description	IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed	IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed	IGBT Transistors Trench gte FieldStop IGBT 650V 80A
Manufacturer	STMicroelectronics	STMicroelectronics	STMicroelectronics
Product Category	IGBT Transistors	IGBT Transistors	IGBT Transistors
Technology	Si	Si	Si
Series	STGW80H65DFB-4	STGW80H65FB	STGW80H65DFB
Brand	STMicroelectronics	STMicroelectronics	STMicroelectronics
Product Type	IGBT Transistors	IGBT Transistors	IGBT Transistors
Factory Pack Quantity	600	600	600
Subcategory	IGBTs	IGBTs	IGBTs
RoHS	-	Y	Y
Package / Case	-	TO-247-3	TO-247-3
Mounting Style	-	Through Hole	Through Hole
Configuration	-	Single	Single
Collector Emitter Voltage VCEO Max	-	650 V	650 V
Collector Emitter Saturation Voltage	-	1.6 V	1.6 V
Maximum Gate Emitter Voltage	-	20 V	20 V
Continuous Collector Current at 25 C	-	120 A	120 A
Pd Power Dissipation	-	469 W	469 W
Minimum Operating Temperature	-	- 55 C	- 55 C
Maximum Operating Temperature	-	+ 175 C	+ 175 C
Packaging	-	Tube	Tube
Continuous Collector Current Ic Max	-	80 A	80 A
Gate Emitter Leakage Current	-	250 nA	250 nA
Unit Weight	-	1.340411 oz	1.340411 oz