STGWA15H120DF2 vs STGWA15M120DF3 vs STGWA15H120F2

PartNumber	STGWA15H120DF2	STGWA15M120DF3	STGWA15H120F2
Description	IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed	IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 15 A low loss	IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
Manufacturer	STMicroelectronics	STMicroelectronics	STMicroelectronics
Product Category	IGBT Transistors	IGBT Transistors	IGBT Transistors
Technology	Si	Si	Si
Mounting Style	Through Hole	Through Hole	Through Hole
Configuration	Single	Single	Single
Collector Emitter Voltage VCEO Max	1200 V	1200 V	1200 V
Collector Emitter Saturation Voltage	2.5 V	1.85 V	2.5 V
Maximum Gate Emitter Voltage	20 V	20 V	20 V
Continuous Collector Current at 25 C	30 A	30 A	30 A
Pd Power Dissipation	259 W	283 W	259 W
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 175 C	+ 175 C	+ 175 C
Series	STGWA15H120DF2	STGWA15M120DF3	STGWA15H120F2
Brand	STMicroelectronics	STMicroelectronics	STMicroelectronics
Continuous Collector Current	15 A	-	15 A
Gate Emitter Leakage Current	+/- 250 nA	250 nA	+/- 250 nA
Product Type	IGBT Transistors	IGBT Transistors	IGBT Transistors
Factory Pack Quantity	600	600	600
Subcategory	IGBTs	IGBTs	IGBTs
RoHS	-	Y	-
Package / Case	-	TO-247-3	-
Packaging	-	Tube	-
Unit Weight	-	1.340411 oz	-