STGWA40H120DF2 vs STGWA40H60DLFB vs STGWA40H120F2

PartNumber	STGWA40H120DF2	STGWA40H60DLFB	STGWA40H120F2
Description	IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed	IGBT Transistors	IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
Manufacturer	STMicroelectronics	STMicroelectronics	STMicroelectronics
Product Category	IGBT Transistors	IGBT Transistors	IGBT Transistors
RoHS	Y	Y	-
Technology	Si	Si	Si
Package / Case	TO-247-3	TO-247-3	-
Mounting Style	Through Hole	Through Hole	Through Hole
Configuration	Single	Single	Single
Collector Emitter Voltage VCEO Max	1.2 kV	600 V	1200 V
Collector Emitter Saturation Voltage	2.5 V	1.6 V	2.5 V
Maximum Gate Emitter Voltage	20 V	2 V	20 V
Continuous Collector Current at 25 C	80 A	-	80 A
Pd Power Dissipation	468 W	283 W	468 W
Minimum Operating Temperature	- 55 C	-	- 55 C
Maximum Operating Temperature	+ 175 C	+ 175 C	+ 175 C
Series	STGWA40H120DF2	STGWA40H60DLFB	STGWA40H120F2
Continuous Collector Current Ic Max	80 A	40 A	-
Height	5.15 mm	-	-
Length	20.15 mm	-	-
Operating Temperature Range	- 55 C to + 175 C	-	-
Width	15.75 mm	-	-
Brand	STMicroelectronics	STMicroelectronics	STMicroelectronics
Continuous Collector Current	40 A	-	40 A
Gate Emitter Leakage Current	250 nA	-	250 nA
Product Type	IGBT Transistors	IGBT Transistors	IGBT Transistors
Factory Pack Quantity	600	600	600
Subcategory	IGBTs	IGBTs	IGBTs
Unit Weight	1.340411 oz	-	-