STGWT30V60DF vs STGWT30H65FB vs STGWT30H60DFB

PartNumber	STGWT30V60DF	STGWT30H65FB	STGWT30H60DFB
Description	IGBT Transistors 600V 30A High Speed Trench Gate IGBT	IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed	IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
Manufacturer	STMicroelectronics	STMicroelectronics	STMicroelectronics
Product Category	IGBT Transistors	IGBT Transistors	IGBT Transistors
RoHS	Y	Y	Y
Technology	Si	Si	Si
Package / Case	TO-3P	TO-3P	TO-3P
Mounting Style	Through Hole	Through Hole	Through Hole
Configuration	Single	Single	Single
Collector Emitter Voltage VCEO Max	600 V	650 V	600 V
Collector Emitter Saturation Voltage	2.35 V	1.75 V	1.55 V
Maximum Gate Emitter Voltage	20 V	20 V	20 V
Continuous Collector Current at 25 C	60 A	30 A	60 A
Pd Power Dissipation	258 W	260 W	260 W
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 175 C	+ 175 C	+ 175 C
Series	STGWT30V60DF	STGWT30H65FB	STGWT30H60DFB
Packaging	Tube	Tube	Tube
Brand	STMicroelectronics	STMicroelectronics	STMicroelectronics
Gate Emitter Leakage Current	250 nA	250 nA	250 nA
Product Type	IGBT Transistors	IGBT Transistors	IGBT Transistors
Factory Pack Quantity	300	300	300
Subcategory	IGBTs	IGBTs	IGBTs
Unit Weight	0.238311 oz	0.238311 oz	0.238311 oz
Continuous Collector Current Ic Max	-	60 A	30 A