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| PartNumber | STGWT60H65DFB | STGWT60H60DLFB | STGWT60H65DFB GWT60H65DF |
| Description | IGBT Transistors 650V 60A HSpd trench gate field-stop IGBT | IGBT Transistors 600V 60A HSpd trench gate field-stop IGBT | |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | IGBT Transistors | IGBT Transistors | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Package / Case | TO-3P | TO-3P | - |
| Mounting Style | Through Hole | Through Hole | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 650 V | 600 V | - |
| Collector Emitter Saturation Voltage | 1.6 V | 1.6 V | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Continuous Collector Current at 25 C | 80 A | 80 A | - |
| Pd Power Dissipation | 375 W | 375 W | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Series | STGWT60H65DFB | STGWT60H60DLFB | - |
| Packaging | Tube | Tube | - |
| Continuous Collector Current Ic Max | 60 A | 60 A | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Gate Emitter Leakage Current | 250 nA | 250 nA | - |
| Product Type | IGBT Transistors | IGBT Transistors | - |
| Factory Pack Quantity | 300 | 300 | - |
| Subcategory | IGBTs | IGBTs | - |
| Unit Weight | 0.238311 oz | 0.238311 oz | - |