PartNumber | STGWT60H65DFB | STGWT60H65DFB GWT60H65DFB | STGWT60H65DFB GWT60H65DF |
Description | IGBT Transistors 650V 60A HSpd trench gate field-stop IGBT | ||
Manufacturer | STMicroelectronics | - | - |
Product Category | IGBT Transistors | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Package / Case | TO-3P | - | - |
Mounting Style | Through Hole | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 650 V | - | - |
Collector Emitter Saturation Voltage | 1.6 V | - | - |
Maximum Gate Emitter Voltage | 20 V | - | - |
Continuous Collector Current at 25 C | 80 A | - | - |
Pd Power Dissipation | 375 W | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Series | STGWT60H65DFB | - | - |
Packaging | Tube | - | - |
Continuous Collector Current Ic Max | 60 A | - | - |
Brand | STMicroelectronics | - | - |
Gate Emitter Leakage Current | 250 nA | - | - |
Product Type | IGBT Transistors | - | - |
Factory Pack Quantity | 300 | - | - |
Subcategory | IGBTs | - | - |
Unit Weight | 0.238311 oz | - | - |