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| PartNumber | STH140N8F7-2 | STH140N6F7-6 | STH140N6F7-2 |
| Description | MOSFET N-chanl 80 V 33 mOhm typ 90 A Pwr MOSFET | MOSFET N-channel 60 V, 0.0028 Ohm typ., 80 A STripFET F7 Power MOSFET in H2PAK-6 package | MOSFET N-channel 60 V, 0.0028 Ohm typ., 80 A STripFET F7 Power MOSFET in H2PAK-2 package |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | H2PAK-2 | H2PAK-6 | H2PAK-2 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 80 V | 60 V | 60 V |
| Id Continuous Drain Current | 90 A | 80 A | 80 A |
| Rds On Drain Source Resistance | 4 mOhms | 2.8 mOhms | 3.2 mOhms |
| Vgs th Gate Source Threshold Voltage | 4.5 V | 2 V | 2 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 96 nC | 55 nC | 55 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 200 W | 158 W | 158 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | STripFET | STripFET | STripFET |
| Packaging | Reel | - | Reel |
| Series | STH140N8F7-2 | STH140N6F7-6 | STH140N6F7-2 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Fall Time | 44 ns | 20 ns | 20 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 51 ns | 68 ns | 68 ns |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 82 ns | 39 ns | 39 ns |
| Typical Turn On Delay Time | 26 ns | 24 ns | 24 ns |
| Unit Weight | 0.139332 oz | - | 0.139332 oz |