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| PartNumber | STH175N4F6-2AG | STH170N8F7-2 | STH17 |
| Description | MOSFET Automotive-grade N-channel 40 V, 1.9 mOhm typ., 120 A STripFET F6 Power MOSFET in H2PAK-2 package | MOSFET N-channel 80 V, 0.0028 Ohm typ., 120 A STripFET F7 Power MOSFET in a H2PAK-2 package | |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | H2PAK-2 | H2PAK-2 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 80 V | - |
| Id Continuous Drain Current | 120 A | 120 A | - |
| Rds On Drain Source Resistance | 1.9 mOhms | 3.7 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 4.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 130 nC | 120 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 150 W | 250 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | - | - |
| Tradename | STripFET | STripFET | - |
| Packaging | Reel | Reel | Reel |
| Series | STH175N4F6-2AG | STH170N8F7-2 | N-channel STripFET |
| Transistor Type | 1 N-Channel | - | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Fall Time | 57 ns | 37 ns | 37 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 150 ns | 53 ns | 53 ns |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 106 ns | 79 ns | 79 ns |
| Typical Turn On Delay Time | 24 ns | 38 ns | 38 ns |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Height | - | 4.8 mm | - |
| Length | - | 15.8 mm | - |
| Product | - | Power MOSFET | - |
| Type | - | STripFET F7 | - |
| Width | - | 10.4 mm | - |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 250 W |
| Vgs Gate Source Voltage | - | - | +/- 20 V |
| Id Continuous Drain Current | - | - | 120 A |
| Vds Drain Source Breakdown Voltage | - | - | 80 V |
| Vgs th Gate Source Threshold Voltage | - | - | 2.5 V to 4.5 V |
| Rds On Drain Source Resistance | - | - | 3.7 mOhms |
| Qg Gate Charge | - | - | 120 nC |