PartNumber | STH180N10F3-2 | STH180N10F3-2-CUT TAPE | STH180N10F3 |
Description | MOSFET N-Ch 100V 3.9 mOhm 180A STripFET | ||
Manufacturer | STMicroelectronics | - | STM |
Product Category | MOSFET | - | FETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | H2PAK-2 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 120 A | - | - |
Rds On Drain Source Resistance | 4.5 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 4 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 114.6 nC | - | - |
Pd Power Dissipation | 315 W | - | - |
Configuration | Single | - | - |
Tradename | STripFET | - | - |
Packaging | Reel | - | Reel |
Series | STH180N10F3-2 | - | N-channel STripFET |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Brand | STMicroelectronics | - | - |
Fall Time | 6.9 ns | - | 6.9 ns |
Product Type | MOSFET | - | - |
Rise Time | 97.1 ns | - | 97.1 ns |
Factory Pack Quantity | 1000 | - | - |
Subcategory | MOSFETs | - | - |
Unit Weight | 0.139332 oz | - | 0.139332 oz |
Package Case | - | - | TO-252-3 |
Pd Power Dissipation | - | - | 315 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 120 A |
Vds Drain Source Breakdown Voltage | - | - | 100 V |
Vgs th Gate Source Threshold Voltage | - | - | 4 V |
Rds On Drain Source Resistance | - | - | 4.5 mOhms |
Qg Gate Charge | - | - | 114.6 nC |