STH270N8F7-2 vs STH270N8F7-6 vs STH270N8F7

PartNumber	STH270N8F7-2	STH270N8F7-6	STH270N8F7
Description	MOSFET N-CH 80V 17mOhm 180A STripFET VII	MOSFET N-CH 80V 17mOhm 180A STripFET VII
Manufacturer	STMicroelectronics	STMicroelectronics	STMicroelectronics
Product Category	MOSFET	MOSFET	Transistors - FETs, MOSFETs - Single
RoHS	Y	Y	-
Technology	Si	Si	Si
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	H2PAK-2	TO-263-7	-
Number of Channels	1 Channel	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	80 V	80 V	-
Id Continuous Drain Current	180 A	180 A	-
Rds On Drain Source Resistance	2.1 mOhms	2.1 mOhms	-
Vgs th Gate Source Threshold Voltage	2 V	2 V	-
Vgs Gate Source Voltage	20 V	20 V	-
Qg Gate Charge	193 nC	193 nC	-
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 175 C	+ 175 C	+ 175 C
Pd Power Dissipation	315 W	315 W	-
Configuration	Single	Single	Single
Channel Mode	Enhancement	Enhancement	Enhancement
Tradename	STripFET	STripFET	-
Packaging	Reel	Reel	Reel
Series	STH270N8F7-2	STH270N8F7-6	N-channel STripFET
Transistor Type	1 N-Channel	1 N-Channel	1 N-Channel
Brand	STMicroelectronics	STMicroelectronics	-
Fall Time	42 ns	42 ns	42 ns
Product Type	MOSFET	MOSFET	-
Rise Time	180 ns	180 ns	180 ns
Factory Pack Quantity	1000	1000	-
Subcategory	MOSFETs	MOSFETs	-
Typical Turn Off Delay Time	98 ns	98 ns	98 ns
Typical Turn On Delay Time	56 ns	56 ns	56 ns
Unit Weight	0.139332 oz	0.056438 oz	0.139332 oz
Package Case	-	-	TO-252-3
Pd Power Dissipation	-	-	315 W
Vgs Gate Source Voltage	-	-	20 V
Id Continuous Drain Current	-	-	180 A
Vds Drain Source Breakdown Voltage	-	-	80 V
Vgs th Gate Source Threshold Voltage	-	-	2 V
Rds On Drain Source Resistance	-	-	2.1 mOhms
Qg Gate Charge	-	-	193 nC