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| PartNumber | STI12N65M5 | STI 1206-21-PG | STI120NH03L |
| Description | MOSFET N-channel 650 V 0.39 Ohm 8.5 A MDmesh | ||
| Manufacturer | STMicroelectronics | - | ST |
| Product Category | MOSFET | - | IC Chips |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-262-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 650 V | - | - |
| Id Continuous Drain Current | 8.5 A | - | - |
| Rds On Drain Source Resistance | 430 mOhms | - | - |
| Vgs Gate Source Voltage | 25 V | - | - |
| Qg Gate Charge | 20 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 70 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Series | STD12N65M5 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | STMicroelectronics | - | - |
| Fall Time | 15.6 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 17.6 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.050717 oz | - | - |