PartNumber | STL19N60M2 | STL19N60DM2 | STL19N65M5 |
Description | MOSFET N-channel 600 V, 0.278 Ohm typ., 11 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package | MOSFET | MOSFET N-Ch 650V 0.215 Ohm typ. 12.5A MDmeshM5 |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerFLAT-8x8-HV-5 | PowerFLAT-8x8-HV-5 | PowerFLAT-8x8-HV-5 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 650 V | 710 V |
Id Continuous Drain Current | 11 A | 11 A | 12.5 A |
Rds On Drain Source Resistance | 278 mOhms | 320 mOhms | 240 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | 4 V | 4 V |
Vgs Gate Source Voltage | 25 V | 25 V | 25 V |
Qg Gate Charge | 21.5 nC | 21 nC | 31 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 90 W | 90 W | 90 W |
Configuration | Single | Single | Triple |
Channel Mode | Enhancement | Enhancement | - |
Tradename | MDmesh | - | MDmesh |
Packaging | Reel | Reel | Reel |
Series | STL19N60M2 | STL19N60DM2 | STL19N65M5 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Forward Transconductance Min | - | - | - |
Fall Time | 10.6 ns | - | 9 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 9 ns | - | 7 ns |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 47 ns | - | 11 ns |
Typical Turn On Delay Time | 12 ns | - | 36 ns |
RoHS | - | Y | Y |
Development Kit | - | - | - |
Moisture Sensitive | - | Yes | Yes |