STL8N10F7 vs STL8N65M2 vs STL8N10LF3

 
PartNumberSTL8N10F7STL8N65M2STL8N10LF3
DescriptionMOSFET N-channel 100 V, 0.017 Ohm typ., 35 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 packageMOSFET POWER MOSFETMOSFET N-Ch 100 V 25 mOhm 7.8 A STripFET III
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerFLAT-3.3x3.3-8PowerFLAT-8PowerFLAT-5x6-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V650 V100 V
Id Continuous Drain Current35 A-7.8 A
Rds On Drain Source Resistance17 mOhms-25 mOhms
Vgs th Gate Source Threshold Voltage2.5 V-1 V
Vgs Gate Source Voltage20 V25 V20 V
Qg Gate Charge25 nC-20.5 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 175 C
Pd Power Dissipation50 W-70 W
ConfigurationSingleSingleSingle
Channel ModeEnhancement-Enhancement
TradenameSTripFET-STripFET
PackagingReelReelReel
SeriesSTL8N10F7STL8N65M2STL8N10LF3
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Fall Time8 ns-5.2 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time17 ns-9.6 ns
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time24 ns-50.6 ns
Typical Turn On Delay Time15 ns-8.7 ns
Product-Power MOSFET-
Qualification--AEC-Q101
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