STP11NM60N vs STP11NM60N,P11NM60N vs STP11NM60N,P11NM60N,STP1

 
PartNumberSTP11NM60NSTP11NM60N,P11NM60NSTP11NM60N,P11NM60N,STP1
DescriptionMOSFET N-channel MOSFET
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current10 A--
Rds On Drain Source Resistance370 mOhms--
Vgs Gate Source Voltage25 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation90 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height9.15 mm--
Length10.4 mm--
SeriesSTB11NM60--
Transistor Type1 N-Channel--
TypePower MOSFET--
Width4.6 mm--
BrandSTMicroelectronics--
Forward Transconductance Min7.5 S--
Fall Time12 ns--
Product TypeMOSFET--
Rise Time18.5 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time50 ns--
Typical Turn On Delay Time22 ns--
Unit Weight0.011640 oz--
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