PartNumber | STP15N65M5 | STP15N60M2-EP | STP15N65M5 15N65M5 |
Description | MOSFET N-Ch 650V .0308 Ohm 11A MDmesh V MOS | MOSFET N-channel 600 V, 0.340 Ohm typ., 11 A MDmesh M2 EP Power MOSFET in a TO-220 package | |
Manufacturer | STMicroelectronics | STMicroelectronics | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-220-3 | TO-220-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 650 V | 600 V | - |
Id Continuous Drain Current | 11 A | 11 A | - |
Rds On Drain Source Resistance | 340 mOhms | 378 mOhms | - |
Pd Power Dissipation | 85 W | 110 W | - |
Configuration | Single | Single | - |
Tradename | MDmesh | MDmesh | - |
Packaging | Tube | - | - |
Series | STP15N65M5 | STP15N60M2-EP | - |
Transistor Type | 1 N-Channel | - | - |
Brand | STMicroelectronics | STMicroelectronics | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Unit Weight | 0.011640 oz | 0.011640 oz | - |
Vgs th Gate Source Threshold Voltage | - | 2 V | - |
Vgs Gate Source Voltage | - | 25 V | - |
Qg Gate Charge | - | 17 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Channel Mode | - | Enhancement | - |
Fall Time | - | 15 ns | - |
Rise Time | - | 10 ns | - |
Typical Turn Off Delay Time | - | 40 ns | - |
Typical Turn On Delay Time | - | 11 ns | - |