STP18N60DM2 vs STP18N55M5 vs STP18N50

 
PartNumberSTP18N60DM2STP18N55M5STP18N50
DescriptionMOSFET N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-220 packageMOSFET N-Ch 550V 0.18 Ohm 13A Mdmesh M5
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V550 V-
Id Continuous Drain Current12 A13 A-
Rds On Drain Source Resistance260 mOhms240 mOhms-
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage25 V25 V-
Qg Gate Charge20 nC31 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation90 W90 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
SeriesSTP18N60DM2STP18N55M5-
Transistor Type1 N-Channel1 N-Channel-
BrandSTMicroelectronicsSTMicroelectronics-
Forward Transconductance Min---
Fall Time32.5 ns13 ns-
Product TypeMOSFETMOSFET-
Rise Time8 ns9.5 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time9.5 ns29 ns-
Typical Turn On Delay Time13.5 ns--
Unit Weight0.011640 oz0.011640 oz-
Tradename-MDmesh-
Packaging-Tube-
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