STP28NM60ND vs STP28NM50N vs STP28NM50N 28NM50N

 
PartNumberSTP28NM60NDSTP28NM50NSTP28NM50N 28NM50N
DescriptionMOSFET N-channel 600 V 0 120 Ohm typ 24 AMOSFET N-Ch 500V 0.135 21A MDmesh II
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage650 V500 V-
Id Continuous Drain Current23 A21 A-
Rds On Drain Source Resistance150 mOhms158 mOhms-
Vgs th Gate Source Threshold Voltage4 V4 V-
Vgs Gate Source Voltage25 V25 V-
Qg Gate Charge62.5 nC50 nC-
Pd Power Dissipation190 W90 W-
ConfigurationSingleSingle-
PackagingTubeTube-
SeriesSTP28NM60NDSTP28NM50N-
Transistor Type1 N-Channel1 N-Channel-
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time27 ns52 ns-
Product TypeMOSFETMOSFET-
Rise Time21.5 ns19 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time92 ns62 ns-
Typical Turn On Delay Time23.5 ns13.6 ns-
Unit Weight0.011640 oz0.011640 oz-
Maximum Operating Temperature-+ 150 C-
Tradename-MDmesh-
Type-N-Channel MDmesh II Power MOSFET-
Forward Transconductance Min-1.5 S-
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