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| PartNumber | STP6N62K3 | STP6N60M2 | STP6N65M2 |
| Description | MOSFET N-channel 620V 1.1 | MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2 | MOSFET N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in TO-220 package |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 620 V | 600 V | 650 V |
| Id Continuous Drain Current | 5.5 A | 4.5 A | 4 A |
| Rds On Drain Source Resistance | 1.28 Ohms | 1.06 Ohms | 1.35 Ohms |
| Vgs Gate Source Voltage | 30 V | 25 V | 25 V |
| Qg Gate Charge | 34 nC | 8 nC | 9.8 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 90 W | 60 W | 60 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | - |
| Tradename | SuperMESH | MDmesh | MDmesh |
| Packaging | Tube | Tube | Tube |
| Height | 9.15 mm | - | - |
| Length | 10.4 mm | - | - |
| Series | STP6N62K3 | STP6N60M2 | STP6N65M2 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 4.6 mm | - | - |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Fall Time | 19 ns | 22.5 ns | 20 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 12.5 ns | 7.4 ns | 7 ns |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 27 ns | 24 ns | 6.5 ns |
| Typical Turn On Delay Time | 13 ns | 9.5 ns | 19 ns |
| Unit Weight | 0.011640 oz | 0.011640 oz | 0.011640 oz |
| Vgs th Gate Source Threshold Voltage | - | 3 V | 3 V |
| Product | - | - | Power MOSFET |